Quantum, normal and anomalous Hall effect in 2D ferromagnetic structures: GaAs/InGaAs/GaAs quantum well with remote Mn delta-layer

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Aronzon, B.^1 ; Davydov, A.^1 ; Goiran, M.^2,4 ; Raquet, B.^2,4 ; Lashkul, A.^3 ; Lahderanta, E.^3

RRC kurchatov Institute, Kurchtov sq. 1, Moscow, 123182, Russia^1

LNCMI, CNRS-UPR 3228, UPS, 143 Avenue de Rangueil, France^2

Lappeenranta University of Technology, PO Box 20, Lappeenranta, 53850, Finland^3

25 rue des Martyrs, 31400 Toulouse, 38042 Grenoble, France^4

关键词: Anomalous hall effects;    Electronic transport;    Ferromagnetic orderings;    Ferromagnetic structures;    Magnetization measurements;    Manganese content;    Sample resistance;    Temperature dependence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012001/pdf
DOI  :  10.1088/1742-6596/456/1/012001

来源: IOP

【 摘 要 】

We study experimentally the electronic transport and magnetism of GaAs/InGaAs/GaAs quantum wells (QW) with remote Mn δ-layer. The 2D energy spectrum of the carriers is revealed by quantum Hall Effect measurements. The ferromagnetic ordering is evidenced by anomalous Hall Effect and direct magnetization measurements. A signature of this state is also observed on the temperature dependence of the sample resistance. The dependence of the Curie temperature, TC, on manganese content, quantum well depth, and on the spacer thickness between QW and Mn δ-layer shed light on the mechanisms of exchange interaction in such structures.