Stochastic and fractal properties of silicon and porous silicon rough surfaces

24th IUPAP Conference on Computational Physics

物理学;计算机科学

Hosseinabadi, S.^1 ; Rajabi, M.^2

Department of Physics, East Tehran Branch, Islamic Azad University, P. O. Box 163-33955, Tehran, Iran^1

Iranian Research Organization for Science and Technology (IROST), P. O. Box 33535-111, Tehran, Iran^2

关键词: Correlation lengths;    Fractal behaviors;    Fractal properties;    Generalized Hurst exponent;    Height distribution;    Scaling exponent;    Singularity spectrum;    Stochastic properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/454/1/012035/pdf
DOI  :  10.1088/1742-6596/454/1/012035

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

In this paper, we investigate the stochastic properties and fractal behavior of Si and porous silicon (PS) rough surfaces to characterize the complexity of their morphology. To this end, height fluctuations of these rough surfaces are determined by Atomic Force Microscopy (AFM) and then roughness and correlation length of the surfaces are calculated. The generalized Hurst exponent, h(q) and singularity spectrum, f(α) are obtained by using two dimensional MF-DFA method for both rough surfaces; Our results show that both mentioned surfaces are multifractal and have different scaling exponents. To investigate the reason of the observed multifractality behavior, we determine height distribution, skewness and kurtosis measures and show that the deviation from the Gaussian distribution for the height fluctuations of the surfaces can be a reason for the observed multifractality behavior.