Chemically gated electronic structure of a superconducting doped topological insulator system

10th International Conference on Materials and Mechanisms of Superconductivity

Wray, L.A.^1,2 ; Xu, S.^2 ; Neupane, M.^2 ; Fedorov, A.V.^1 ; Hor, Y.S.^3,4 ; Cava, R.J.^4 ; Hasan, M.Z.^2

Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94305, United States^1

Department of Physics, Joseph Henry Laboratories, Princeton University, Princeton, NJ 08544, United States^2

Department of Physics, Missouri University of Science and Technology, Rolla, MO 65409, United States^3

Department of Chemistry, Princeton University, Princeton, NJ 08544, United States^4

关键词: Angle resolved photoemission spectroscopy;    Copper atoms;    Crystal surfaces;    Effect of chemicals;    Electrical field strength;    Superconducting properties;    Surface normals;    Topological insulators;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/449/1/012037/pdf
DOI  :  10.1088/1742-6596/449/1/012037

来源: IOP

【 摘 要 】

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.