Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

16th International Conference on Positron Annihilation

Melikhova, O.^1 ; Cízek, J.^1 ; Procházka, I.^1 ; Kuzel, R.^1 ; Novotný, M.^2 ; Bulír, J.^2 ; Lancok, J.^2 ; Anwand, W.^3 ; Brauer, G.^3 ; Connolly, J.^4 ; McCarthy, E.^4 ; Krishnamurthy, S.^4 ; Mosnier, J.-P.^4

Charles University in Prague, Faculty of Mathematics and Physics, V Holeovickách 2, 180 00 Prague 8, Czech Republic^1

Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague, Czech Republic^2

Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, Postfach 510119, D-01314, Dresden, Germany^3

National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9, Ireland^4

关键词: Amorphous substrate;    Density of defects;    Mosaic spread;    Single crystalline substrates;    Slow positron implantation spectroscopies;    Various substrates;    Wurtzite structure;    ZnO thin film;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/443/1/012018/pdf
DOI  :  10.1088/1742-6596/443/1/012018

来源: IOP

【 摘 要 】

ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.