Dielectric properties and structural defects in BaTi1?xSnxO3 ceramics

16th International Conference on Positron Annihilation

Lijuan, Zhang^1 ; Lihai, Wang^2 ; Jiandang, Liu^1 ; Bin, Cheng^1 ; Minglei, Zhao^2 ; Bangjiao, Ye^1

Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China^1

School of Physics, Shandong University, Jinan 250100, China^2

关键词: Defect concentrations;    Dielectric properties measurements;    Doppler broadening spectroscopy;    Positron annihilation lifetime spectroscopy;    Positron annihilation technique;    Solid state reaction route;    Structural defect;    X-ray diffraction measurements;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/443/1/012014/pdf
DOI  :  10.1088/1742-6596/443/1/012014

来源: IOP

【 摘 要 】

As a function of Sn doping concentration x, dielectric properties and X-ray diffraction measurements were carried out on BaTi1-xSnxO3(BTSx) ceramics fabricated by the solid-state reaction route. Positron annihilation lifetime spectroscopy and coincident Doppler-broadening spectroscopy were also measured for the evaluation of defects in the BTSxceramics. Dielectric properties measurement reveals that the permittivity of BTSxceramic gradually increases with increasing Sn dopant content for x≤3%, and then decreases. This change of permittivity is found to agree well with the relative defect concentration estimated using two positron annihilation techniques. The S-W plot indicates that the defect species do not change with Sn doping. The variation correlations between defects and dielectric properties further proves that BTSxceramics with the higher relative defect concentration present a lower permittivity.