Surface-charge measurements in microgap dielectric barrier discharge using bismuth silicon oxide crystals

11th Asia Pacific Conference on Plasma Science and Technology;25th Symposium on Plasma Science for Materials

Mukaigawa, S.^1,2 ; Matsuda, H.^1 ; Fue, H.^1 ; Takahashi, R.^1 ; Takaki, K.^1,2 ; Fujiwara, T.^1,2

Faculty of Engineering, Iwate University, Morioka 020-8551, Japan^1

Soft-Path Engineering Research Center (SPERC), Faculty of Engineering, Iwate University, Morioka 020-8551, Japan^2

关键词: Bismuth silicon oxide;    Bismuth silicon oxide crystals;    Charge measurements;    Circuit equation;    Dielectric barrier discharges;    Discharge cells;    Discharge currents;    Experimental conditions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/441/1/012012/pdf
DOI  :  10.1088/1742-6596/441/1/012012

来源: IOP

【 摘 要 】

A surface-charge measurement system based on the Pockels effect in bismuth silicon oxide dielectric crystals was constructed for measuring the surface-charge density of the dielectrics in the microgap dielectric barrier discharge. We re-examined the calculation methods of the surface-charge density from the voltage applied to the BSO crystal, obtained by laser interferometry. The charge calculated using the circuit equation coincided with the that obtained using the discharge current. Under certain experimental conditions, the maximum values of the surface charge density in the discharge cell with and without a protection glass were +2.0 and +2.5 nC/cm2, respectively.