Effect of hydrogen radical on decomposition of chlorosilane source gases

11th Asia Pacific Conference on Plasma Science and Technology;25th Symposium on Plasma Science for Materials

Sumiya, Masatomo^1 ; Akizuki, Tomohiro^1,2 ; Itaka, Kenji^3 ; Kubota, Makoto^1,2 ; Tsubouchi, Kenta^4 ; Ishigaki, Takamasa^2,5 ; Koinuma, Hideomi^4,6

Widegap Materials Group, National Institute for Materials Science, 305-0044, Tsukuba, Japan^1

Department of Materials Chemistry, Hosei University, Koganei Tokyo, 184-8584, Japan^2

North Japan Research Institute for Sustainable Energy, Hirosaki University, 2-1-3, Matsubara, Aomori, 030-0813, Japan^3

Graduate School of Frontier Sciences, University of Tokyo, 277-8568, Kashiwa, Japan^4

Department of Chemical Science and Technology, Hosei University, Koganei, Tokyo, 184-8584, Japan^5

Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang 627-706, Korea, Republic of^6

关键词: Chlorosilanes;    Dynamical calculations;    Effect of hydrogen;    Hydrogen radical;    Siemens process;    Source gas;    Thermal plasma;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/441/1/012003/pdf
DOI  :  10.1088/1742-6596/441/1/012003

来源: IOP

【 摘 要 】

The effect of hydrogen radical on production of Si from chlorosilane sources has been studied. We used hydrogen radical generated from pulsed thermal plasma to decompose SiHCl3and SiCl4. Hydrogen radical was effective for lowering the temperature to produce Si from SiHCl3. SiCl4source, which was chemically stable and by-product in Siemens process, was decomposed effectively by hydrogen radical. The decomposition of SiCl4was consistent with the thermo-dynamical calculation predicting that the use of hydrogen radical could drastically enhance the yield of Si production rather than case of H2gas.