Study on The Issue of Electric Field Concentration in Submodule of Press Pack IGBT

2018 International Conference on Civil and Hydraulic Engineering

土木建筑工程;水利工程

Li, Jinyuan^1 ; Chen, Zhongyuan^1 ; Tang, Xinling^1 ; Junda, Sun^2 ; Zhao, Zhibin^2

State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute of State Grid Corporation of China, Beijing

102209, China^1

State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing

102206, China^2

关键词: Comsol multiphysics;    Field concentrations;    Finite element simulations;    Model and simulation;    Multi-physics;    Press pack;    Submodules;    Withstand voltage;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/189/5/052072/pdf
DOI  :  10.1088/1755-1315/189/5/052072

学科分类：土木及结构工程学

来源: IOP

【 摘 要 】

There is a phenomenon that the chips of press pack IGBT (Insulated Gate Bipolar Transistor) meet the requirements of withstand voltage test, but ignition sometimes occurred in the submodules of the same kind of press pack IGBT during the test. In response to this situation, this paper firstly analyzed that the difference of submodules frame lead to different level of electric field concentration. In this paper, quantitative conclusions have been drawed by modeling and simulation of the actual situation in COMSOL Multiphysics the multiphysics finite element simulation software.