Structure and Photoluminescence Properties of Sm3+ Ion-Doped LiSrBiTeO6 Phosphor

2018 International Conference of Green Buildings and Environmental Management

土木建筑工程;生态环境科学

Deng, Bin^1,2 ; Zhou, Chong-Song^1,2 ; Liu, Hui^1,2 ; Chen, Jun^1,2

College of ChemistryandBiology and Environmental Engineering, Xiangnan University, Chenzhou, Hunan

423043, China^1

Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, Chenzhou, Hunan

423043, China^2

关键词: Excitation spectrum;    Luminescence intensity;    Output wavelengths;    Photoluminescence properties;    Photoluminescence spectrum;    Red emitting phosphor;    Solid state reaction method;    White light emitting diodes;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/186/4/012069/pdf
DOI  :  10.1088/1755-1315/186/4/012069

来源: IOP

【 摘 要 】

A series of novel Sm3+-doped LiSrBiTeO6 red-emitting phosphors were prepared by the solid-state reaction method for the first time. Its crystal structure and luminescence are investigated. The excitation spectrum indicates that the LiSrBiTeO6:Sm3+ phosphor can be excited efficiently under 405 nm irradiation, which matches well with the output wavelength of UV LED chips. The photoluminescence spectrum of LiSrBiTeO6:Sm3+ phosphor shows four peaks assigned to the4G5/2 to6HJ (J = 5/2, 7/2, 9/2, and 11/2) transitions of Sm3+. The strong peak emits bright red luminescence at 645 nm. The luminescence intensity keeps increasing with increasing the content of Sm3+ to 5 mol%. The critical transfer distance of Sm3+ is calculated as 17 Å. All results indicated that LiSrBiTeO6:Sm3+ phosphors have potential application as red phosphors for near-UV chip-based white light-emitting diode and display devices.