Barium strontium titanate thin film growth with variation of lanthanum dopant compatibility as sensor prototype in the satellite technology

4th International Symposium on LAPAN-IPB Satellite for Food Security and Environmental Monitoring

农业科学;生态环境科学

Mulyadi^1 ; Wahyuni, Rika^1 ; Hardhienata, Hendradi^2 ; Irzaman^2

Department of Electrical Engineering, Borneo University, Indonesia^1

Department of Physics, Bogor Agriculture University, Indonesia^2

关键词: Barium strontium titanate thin films;    Chemical solution deposition method;    Doping variation;    Rotational speed;    Satellite technology;    Temperature changes;    Temperature increment;    Temperature monitoring;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/149/1/012069/pdf
DOI  :  10.1088/1755-1315/149/1/012069

来源: IOP

【 摘 要 】

Electrical properties of barium strontium titanate thin films were investigated. Three layers of barium strontium titanate thin films have been prepared by chemical solution deposition method and spin coating technique at 8000 rpm rotational speed for 30 seconds and temperature of annealing at 850°C for eight hours with temperature increment of 1.67°C/minute. Materials produced by the process of lanthanum dopant with doping variations of 2%, 4% and 6% above type-p silicon (100) substrates. Film obtained was then carried out the characterization using USB 2000 VIS-NIR and tauc plot method. As a result, the barium strontium titanate thin film has the value of band gap energy of 1.58 eV, 1.92 eV and 2.24 eV respectively. The characterization of electrical properties shows that the band gap value of barium strontium titanate thin film with lanthanum dopant was in the range of semiconductor value. Barium strontium titanate thin films with lanthanum dopant are sensitive to temperature changes, so it potentially to be applied to temperature monitoring on satellite technology.