Research progress in photolectric materials of CuFeS2

3rd International Conference on Energy Equipment Science and Engineering

Jing, Mingxing^1,2 ; Li, Jing^1,2 ; Liu, Kegao^1,2

Co-Innovation Center for Green Building of Shandong Province, Shandong Jianzhu University, Fengming Road, Jinan

250101, China^1

School of Materials Science and Engineering, Shandong Jianzhu University, Fengming Road, Jinan

250101, China^2

关键词: Development trends;    Direct-gap semiconductor;    Optical absorption coefficients;    Opto-electronic materials;    Photoelectric property;    Preparation process;    Research and development;    Solar cell materials;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/128/1/012087/pdf
DOI  :  10.1088/1755-1315/128/1/012087

来源: IOP

【 摘 要 】

CuFeS2as a photoelectric material, there are many advantages, such as high optical absorption coefficient, direct gap semiconductor, thermal stability, no photo-recession effect and so on. Because of its low price, abundant reserves and non-toxic, CuFeS2has attracted extensive attention of scientists.Preparation method of thin film solar cells are included that Electrodeposition, sputtering, thermal evaporation, thermal spraying method, co-reduction method.In this paper, the development of CuFeS2thin films prepared by co-reduction method and co-reduction method is introduced.In this paper, the structure and development of solar cells, advantages of CuFeS2as solar cell material, the structure and photoelectric properties and magnetic properties of CuFeS2, preparation process analysis of CuFeS2thin film, research and development of CuFeS2in solar cells is included herein. Finally, the development trend of CuFeS2optoelectronic materials is analyzed and further research directions are proposed.