Optimization Problem of Thermal Field on Surface of Revolving Susceptor in Vapor-Phase Epitaxy Reactor

Innovations and Prospects of Development of Mining Machinery and Electrical Engineering

矿业工程;电工学

Zhilenkov, A.A.^1 ; Chernyi, S.G.^1 ; Nyrkov, A.P.^1 ; Sokolov, S.S.^1

Admiral Makarov State University of Maritime and Inland Shipping, 5/7, Dvinskaya St., Saint-Petersburg

198035, Russia^1

关键词: Dollar market;    Electronic device;    High capacity;    High-frequency transistors;    Light emitting devices;    Optimization problems;    Production technology;    Thermal field;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/87/8/082060/pdf
DOI  :  10.1088/1755-1315/87/8/082060

来源: IOP

【 摘 要 】

Nitrides of group III elements are a very suitable basis for deriving light-emitting devices with the radiating modes lengths of 200-600 nm. The use of such semiconductors allows obtaining full-color RGB light sources, increasing record density of a digital data storage device, getting high-capacity and efficient sources of white light. Electronic properties of such semi-conductors allow using them as a basis for high-power and high-frequency transistors and other electronic devices, the specifications of which are competitive with those of SiC-based devices. Only since 2000, the technology of cultivation of crystals III-N of group has come to the level of wide recognition by both abstract science, and the industry that has led to the creation of the multi-billion dollar market. And this is despite a rather low level of development of the production technology of devices on the basis of III-N of materials. The progress that has happened in the last decade requires the solution of the main problem, constraining further development of this technology today - ensuring cultivation of III-N structures of necessary quality. For this purpose, it is necessary to solve problems of the analysis and optimization of processes in installations of epitaxial growth, and, as a result, optimization of its constructions.