C-V Measurement of HfO2 Dielectric Layer Received by UV Stimulated Plasma Anodizing

World Multidisciplinary Earth Sciences Symposium 2016

Bibilashvili, Amiran^1 ; Kushitashvili, Zurab^1

Ivane Javakhishvili Tbilisi State University, LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, Tbilisi

0179, Georgia^1

关键词: C-V characterization;    Charge concentration;    Effective charge;    Electric parameters;    Flat-band voltage;    Keithley Instruments;    Plasma anodizing;    Semiconductor parameter analyzers;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/44/5/052008/pdf
DOI  :  10.1088/1755-1315/44/5/052008

来源: IOP

【 摘 要 】

In this report we consider HfO2 dielectric layer received by UV stimulated plasma anodizing. This dielectric is distinguished by good electric parameters. For this purpose, it was used C-V characterization technic and calculate dielectric constant, flatband voltage, thrishold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument-Semiconductor Parameter Analyzer 4200, oxide thickness was measured by reflectometer-MprobeVis System.