2018 4th International Conference on Environmental Science and Material Application | |
Transient Temperature Field Analysis of Thyristor Turn-on Process under Narrow Pulse Width and Large Current | |
生态环境科学;材料科学 | |
Wu, Jin^1 ; Fu, Xue^1 ; Lei, Ran^1 ; Liu, Siqi^1 ; Wang, Shuai^1 ; Zhao, Yinan^2 | |
School of Electrical Engineering, Naval University of Engineering, Navy University of Engineering, Wuhan | |
430000, China^1 | |
School of Wenzfheng, Soochow University, Suzhou | |
215000, China^2 | |
关键词: Current pulse width; Current rise rates; Highest temperature; Local overheating; Maximum temperature rise; Narrow pulse widths; Transient temperature fields; Turn-on process; | |
Others : https://iopscience.iop.org/article/10.1088/1755-1315/252/3/032069/pdf DOI : 10.1088/1755-1315/252/3/032069 |
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来源: IOP | |
【 摘 要 】
Thyristor will damage because of local overheating under narrow pulse width and large inrush current, if the selection is unreasonable. In this paper, the thermal field model of thyristor opening process is established and the transient temperature field distribution of thyristor is obtained by simulation. Simulation results show that under the narrow pulse width and large current, the temperature distribution on the silicon chip is not uniform, the temperature at the center gate is the highest, and the temperature is gradually decreased from the center point along the radius. The effect of current rise rate and chip radius on thyristor temperature distribution are simulated. Simulation results show that the higher the current rise rate, the higher the temperature of the thyristor center gate. The effect of chip radius on thyristor temperature is related to the pulse width of large inrush current. When the chip radius is smaller than the extended radius corresponding to the current pulse width, the smaller the radius, the higher the maximum temperature rise. When the radius of the chip is equal to or greater than the extended radius corresponding to the current pulse width, increasing the radius of the chip has no effect on the highest temperature rise.
【 预 览 】
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Transient Temperature Field Analysis of Thyristor Turn-on Process under Narrow Pulse Width and Large Current | 1173KB | download |