Bandstructure Effects in the Electronic Transport of Silicon Nanowire in [100] and [110] Transport Orientations

International Conference on Startup Ventures: Technology Developments and Future Strategies

社会科学（总论）

Kumar, Manoj^1 ; Kumar Lamba, Vijay^2

BRCM College of Engineering and Technology, Bahal, Bhiwani, India^1

Global College of Engineering and Technology, Kahanpur Khui, Punjab, India^2

关键词: Atomistic modeling;    Band structure effects;    Carrier velocity;    Electronic transport;    Gate capacitance;    IV characteristics;    Silicon nanowires;    Valley splitting;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/594/1/012005/pdf
DOI  :  10.1088/1757-899X/594/1/012005

学科分类：社会科学、人文和艺术（综合）

来源: IOP

【 摘 要 】

An electronic transport study about band structure effects of silicon nanowire (Si-NW) in [100] and [110] transport orientations has been done. A dispersion calculation has also been done for a sp3d5s∗ hybridized atomistic model along with a Poisson solver. A ballistic model has been used for the evaluation of I-V characteristics. For [100] and [110] transport-oriented nanowires, the total gate capacitance was decreased by 30%. The carrier velocity was affected by both [100] and [110] transport-oriented nanowires. The velocities depend on degeneracy and effective mass of the dispersion. In our study, we have used 3nm thick nanowire oriented in [100] and [110] directions. The [100] oriented nanowire gives better ON-current performance as compared to [110] oriented nanowire. We have studied the valley splitting effects which can lift the degeneracies of 3nm wires. The effective mass which changes with various transport orientations and quantization, was increased with quantization for [100] while it was decreased for [110] transport orientated nanowire.