Photoluminescence from disc-shaped Si3N4/WS2/Al2O3 heterojunction

2019 2nd International Conference on Advanced Materials, Intelligent Manufacturing and Automation

Zhou, Guyu^1 ; Shen, Fang^2

College of Advanced Interdisciplinary Research, National University of Defense Technology, Changsha, Hunan

410073, China^1

School of Metallurgy and Environment, Central South University, Changsha, Hunan

410083, China^2

关键词: Electronic chips;    Nano-meter scale;    Nanoelectronic devices;    Photoluminescence characteristics;    Silicon materials;    Three-dimensional structure;    Transition metal dichalcogenides;    Two-dimensional layered structures;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/569/2/022009/pdf
DOI  :  10.1088/1757-899X/569/2/022009

来源: IOP

【 摘 要 】

Transition metal dichalcogenides (TMDCs) have a direct band gap and exhibit more peculiar properties than graphene. Two-dimensional TMDCs (2D TMDCs) are widely used in many fields such as catalysis, energy storage, and composite materials due to their unique sandwich structure. Compared to the three-dimensional structure of silicon materials, TMDCs have a two-dimensional layered structure at the nanometer scale, which can be used to manufacture semiconductors or smaller, more energy-efficient electronic chips, which will be widely used in the next generation of nanoelectronic devices. In this paper, continuous light and femtosecond laser are used to irradiate disc-shaped Si3N4/WS2/Al2O3 heterojunction, and the photoluminescence characteristics of the heterojunction are studied by changing the distance between the sample and the light source to change the incident power.