Simulation and Optimization of Temperature Field in Large-Sized MOCVD Reactor by Resistance Heating

4th International Conference on Manufacturing, Material and Metallurgical Engineering

Zhao, Lili^1 ; Li, Zhiming^1 ; Guo, Runqiu^2 ; Feng, Lansheng^2 ; Lu, Ligen^1 ; Fu, Xiaoqian^1

Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan, Shandong

250022, China^1

State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shanxi

710071, China^2

关键词: Heating efficiencies;    Heating structures;    Number of layers;    Resistance-heating;    Simulation and optimization;    Standard deviation;    Substrate temperature;    Thermal shields;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/538/1/012035/pdf
DOI  :  10.1088/1757-899X/538/1/012035

来源: IOP

【 摘 要 】

The effect of the number of layers and the length of the heat shields on the heating efficiency and temperature distributions in the substrate have been studied by establishing the model of a single-piece 18-inch MOCVD reactor. The results show that the number of layers of the heat shields is directly proportional to the heating efficiency, decreasing the length of the thermal shield can reduce the standard deviation(STD) of the substrate temperature. When the length of the heat shields is 56mm, the coefficient of substrate temperature STD is 21.41 °C and the STD is about 45% lower than the traditional susceptor. An area within substrate radius of 200mm, the coefficient of substrate temperature STD is 2.64 °C and the STD is about 93% lower than the traditional susceptor. The results obtained will provide theoretical basis for developing the heating structure of large-sized MOCVD reactor.