Liquid-sintered SiC based materials with additive low oxide oxides

Fourth interdisciplinary scientific forum with international participation "New materials and promising technologies"

Perevislov, S.N.^1 ; Lysenkov, A.S.^2 ; Titov, D.D.^2 ; Kim, K.A.^2 ; Tomkovich, M.V.^3 ; Nesmelov, D.D.^4 ; Markov, M.A.^4

Institute of Silicate Chemistry I.V. Grebenshchikov Russian Academy of Sciences, St. Petersburg, Russia^1

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow, Russia^2

Physico-Technical Institute A.F. Ioffe Russian Academy of Sciences, St.-Petersburg, Russia^3

St.-Petersburg State Institute of Technology (Technical University), St.-Petersburg, Russia^4

关键词: Dense materials;    Eutectic mixture;    Resulting materials;    Silicon carbide materials;    Silicon carbide powder;    Sintered SiC;    Sintering additives;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/525/1/012073/pdf
DOI  :  10.1088/1757-899X/525/1/012073

来源: IOP

【 摘 要 】

By the method of free liquid-phase sintering, dense materials based on silicon carbide (P ≤ 0.5%) were obtained. In the preparation of charge powders, the method of co-precipitation of oxides on silicon carbide powder was used. As a sintering additive, a eutectic mixture of the components MgO, Y2O3, and Al2O3 was used, corresponding to the composition on the garnet-spinel line. The resulting materials have a high level of mechanical properties: E = 410 GPa; σ = 680 MPa; K 1C = 6.0 MPa∗m1/2; HV = 21.5 GPa, approaching the level of properties of hot-pressed silicon carbide materials.