Thermomechanical Study and Fracture Properties of Silicon Wafer under Effect of Crystal Orientation

2019 3rd International Conference on Manufacturing Technologies

工业技术（总论）

Romdhane, Mohamed Cherif Ben^1 ; Mrad, Hatem^1 ; Erchiqui, Fouad^1 ; Mrad, Ridha Ben^2

École de Génie, Université du Québec en Abitibi-Témiscamingue, 445 Boulevard de l'Université, Rouyn-Noranda

QC

J9X 5E4, Canada^1

University of Toronto, 5 King's College Rd., Toronto

ON

M5S 3G8, Canada^2

关键词: Effects of temperature;    Impact of temperatures;    Numerical and experimental study;    Piezoresistive properties;    Pressure microsensors;    Thermomechanical behaviour;    Thermomechanical simulation;    Thermomechanical study;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/521/1/012004/pdf
DOI  :  10.1088/1757-899X/521/1/012004

学科分类：工业工程学

来源: IOP

【 摘 要 】

Designing and optimizing the performance of a piezoresistive pressure microsensor involves not only studying the piezoresistive properties of polysilicon but also analyse the thermomechanical behaviour of its most sensitive internal part. This work focuses on an analytical, numerical and experimental study of a silicon wafer used in a pressure sensor. A thermomechanical study was conducted to assess the effects of temperature and material orientation on the deflexion and failure mode of Silicon membrane. The chosen analytical approach is based on Kirchhoff theory in which a square Silicon membrane is subjected to a distributed pressure over all its surface. Thermomechanical simulations and fracture analysis are carried out using Abaqus software. An experimental thermomechanical technique to determine maximum wafer deflexion and its effect on crack initiation and fracture mode was implemented. Deflexions tests were carried out on a bending machine using specimens of p-Si doped wafers. Deflexion values are measured for each applied temperature. Some preliminary tests were performed to determine the impact of temperature and Silicon wafers orientation on maximum deflexion when fracture occurs. The test's results confirmed that the failure mode is highly brittle and follow each time crystal orientations 0° and 45°. Furthermore, at room temperature, fracture occur at 389 μm of displacement, and grows by 5.2 % when temperature is increased over 40°C. Consequently, Silicon sensitivity will be increased by 4%.