Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses

Functional Materials and Nanotechnologies 2018

Klym, H.^1 ; Shpotyuk, O.^2^3 ; Karbovnyk, I.^4 ; Calvez, L.^5 ; Popov, A.I.^6

Lviv Polytechnic National University, 12 Bandera St., Lviv

79646, Ukraine^1

Vlokh Institute of Physical Optics, 23 Dragomanova St., Lviv

79005, Ukraine^2

Jan Dlugosz University in Czestochowa, 13/15 Armii Krajowej St., Czestochowa

42200, Poland^3

Ivan Franko National University of Lviv, 107 Tarnavskogo St., Lviv

79017, Ukraine^4

Equipe Verres et Céramiques, UMR-CNRS 6226, Institute des Sciences Chimiques de Rennes, Université de Rennes 1, Rennes Cedex, France^5

Institute of Solid State Physics, University of Latvia, 8 Kengaraga St., Riga

LV- 1063, Latvia^6

关键词: Chalcogenide glass;    Crystallization transformations;    High temperature modification;    In-process;    Structural investigation;    Surface crystallization;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/503/1/012020/pdf
DOI  :  10.1088/1757-899X/503/1/012020

来源: IOP

【 摘 要 】

Crystallization transformation in the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa4Se phase of low- and high-temperature modification, Ga2Se3 phase (α- and γ-modification) and GeSe2 phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization.