Multiple-trapping formalism for the description of charge transport in disordered organic semiconductors with correlated energy disorder

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Nikitenko, V.R.^1 ; Saunina, A.Yu.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Moscow

115409, Russia^1

关键词: Analytic modeling;    Correlated disorder;    Energy disorder;    Field dependence;    Multiple trapping;    Organics;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012045/pdf
DOI  :  10.1088/1757-899X/498/1/012045

来源: IOP

【 摘 要 】

An applicability of transport level concept, as well as multiple trapping formalism for the description of charge transport in disordered organics with correlated disorder is supported by analytic modeling of temperature and field dependence of mobility. Results of this modeling are in good agreement with well-known results of Monte-Carlo simulations. The reasons for the description of transport by the multiple trapping model and the respective parameters are discussed.