Rationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Fomina, A.V.^1 ; Frantsuzova, V.V.^1 ; Petrenko, Ya.I.^1 ; Kornachev, D.V.^1 ; Avanesyan, A.R.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Financial support;    Integrated microcircuits;    Key performance indicators;    Project financing;    Semiconductor device fabrication;    Semiconductor industry;    Semiconductor products;    Technological parameters;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012043/pdf
DOI  :  10.1088/1757-899X/498/1/012043

来源: IOP

【 摘 要 】

This article describes the systemic problem of the development of the Russian semiconductor industry due to the lack of national production of integrated microcircuits with topological standards below 65 nm. Here are the results of the analysis of the feasibility of production lines of integrated circuits developing, depending on the forecasted volume of demand for various categories of semiconductor products, the technological backlog of Russian organizations and the estimated cost of the project. In this article, there are suggestions on possible sources of project financing and measures of non-financial support. Also, it describes the general technological parameters of the created production. It contains an assessment of key performance indicators of the project and the impact of its implementation on related technological areas.