Temperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Shostachenko, S.A.^1 ; Porokhonko, Y.A.^1 ; Zakharchenko, R.V.^1 ; Leshchev, S.V.^1 ; Maslov, M.M.^1 ; Katin, K.P.^1

National Research Nuclear University MEPHI, Moscow, Russia^1

关键词: Binary subsystems;    Contact formation;    Effect of annealing;    Experimental investigations;    Specific resistances;    Temperature influence;    Thermodynamic description;    Ti/Al/Ni/Au;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012019/pdf
DOI  :  10.1088/1757-899X/498/1/012019

来源: IOP

【 摘 要 】

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of the AlGaN/GaN transistor heterostructure based on Ti/Al/Ni/Au metallization. The Al-Ti-N system has been assessed on the basis of available thermodynamic descriptions for binary subsystems. The effect of annealing temperature on the specific resistance of Ohmic contact was studied.