Evaluation of commercial PIN diodes as gamma radiation dosimeters

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Nikiforova, M.Y.^1 ; Podlepetsky, B.I.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Absorbed dose rate;    Analytical expressions;    Current sensitivity;    Gamma radiation dosimeters;    Maximum sensitivity;    Radiation dose rate;    Reverse voltages;    Transfer characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012015/pdf
DOI  :  10.1088/1757-899X/498/1/012015

来源: IOP

【 摘 要 】

The influence of gamma radiation on the current-voltage characteristics of silicon PIN photodiodes S1223 from Hammamatsu was investigated for their use as gamma radiation dose rate sensitive elements. The transfer characteristic and the dependence of the current sensitivity on the absorbed dose rate in the range from 6.7 Gy(Si)/h to 124 Gy(Si)/h were studied. The range of reverse voltages corresponding to the highest current sensitivity of PIN diodes is determined. An analytical expression of the transfer characteristic for the operating mode with maximum sensitivity to gamma radiation is obtained.