Features of the model of main functional failures of digital CMOS VLSIs under the action of ionizing radiation

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Barbashov, V.M.^1 ; Trushkin, N.S.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Digital CMOS;    Exposed to;    Functional failure;    Logical modeling;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012004/pdf
DOI  :  10.1088/1757-899X/498/1/012004

来源: IOP

【 摘 要 】

Annotation. The methods of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately described when using the concept of fuzzy multiplicity. Methods are proposed for predicting LSI failures when exposed to ionizing radiation, which are based on the model of fuzzy digital and probabilistic reliability automata.