会议论文详细信息
2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies" | |
Features of the model of main functional failures of digital CMOS VLSIs under the action of ionizing radiation | |
Barbashov, V.M.^1 ; Trushkin, N.S.^1 | |
National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow | |
115409, Russia^1 | |
关键词: Digital CMOS; Exposed to; Functional failure; Logical modeling; | |
Others : https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012004/pdf DOI : 10.1088/1757-899X/498/1/012004 |
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来源: IOP | |
【 摘 要 】
Annotation. The methods of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately described when using the concept of fuzzy multiplicity. Methods are proposed for predicting LSI failures when exposed to ionizing radiation, which are based on the model of fuzzy digital and probabilistic reliability automata.
【 预 览 】
Files | Size | Format | View |
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Features of the model of main functional failures of digital CMOS VLSIs under the action of ionizing radiation | 1009KB | download |