The Configuration Effect of SCSR on VFTO and Its Inhibitory Effect Analysis

2019 4th Asia Conference on Power and Electrical Engineering

能源学;电工学

Han, Mingming^1 ; Chen, Bo^1 ; Zhu, Wenbing^1 ; Gu, Chao^1 ; Feng, Yi^1

State Grid Shandong Electric Power Research Institute, Jinan, China^1

关键词: Dominant frequency;    Equivalent impedance;    Frequency domains;    Inhibitory effect;    Installation locations;    Stepped controllable shunt reactor (SCSR);    Very fast transient over voltage (VFTO);    Voltage transformer;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/486/1/012090/pdf
DOI  :  10.1088/1757-899X/486/1/012090

来源: IOP

【 摘 要 】

The very fast transient overvoltage (VFTO) is changed when stepped controllable shunt reactor (SCSR) is installed in substation, this paper simulates and analyzes the closing sequence of the disconnector (DS) and voltage transformer (PT) installation location's influence on VFTO with Dommel transmission line, and establishes the VFTO suppression equivalent impedance model in frequency domain, and analyzes the effect of various measures to suppress VFTO time-frequency amplitude. The results show that the VFTO dominant frequency and the corresponding amplitude can be reduced by reasonable choice of DS closing sequence and PT installation site. Compared to the closing resistor, ferrite has advantages in suppressing VFTO. The peak of VFTO increases first then decreases with the increase of the length of the ferrite.