Effects of Electrochemical Etching Conditions on the Formation and Photoluminescence Properties of P-Type Porous Silicon

5th Annual International Conference on Material Engineering and Application

工业技术（总论）;材料科学

Lu, Le^1 ; Li, Wenbing^1 ; Zhang, Liqiang^1^3 ; Ge, Daohan^1^2^3

Nano/micro Science and Technology Centre, School of Mechanical Engineering, Jiangsu University, Zhenjiang

212013, China^1

National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing

210093, China^2

School of Chemistry, University of New South Wales, Sydney

NSW

2052, Australia^3

关键词: Controllable morphology;    Electrical and mechanical properties;    Etching parameters;    Focus of researches;    P-type silicon;    Photoluminescence properties;    Porous silicon structures;    Silicon-based materials;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/484/1/012001/pdf
DOI  :  10.1088/1757-899X/484/1/012001

来源: IOP

【 摘 要 】

Porous silicon has been widely used in sensors, microelectronics and other fields. This material retains the characteristics of the original silicon-based material, while having good optical, electrical and mechanical properties. How to make porous silicon efficient and controllable by means of anodization has become the focus of research. This article mainly studied the influence of different current conditions and eletrolytes on the pore formation and performance of porous silicon in the electrochemical etching process of p-type silicon. It was found that porous silicon structures with controllable morphologies can be prepared by changing the etching current densities. Moreover, adding oxidants (H2O2) and dimethylformamide (DMF) into the electrolytes will significantly enlarge the etching parameter window of porous silicon and improve its photoluminescence properties. This will help to expand the applications of porous silicon in the field of microelectronics such as biosensors.