Conductivity of superlattices GaAs/AlAs with electrical domains

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Altukhov, I.V.^1 ; Dizhur, S.E.^1^3 ; Kagan, M.S.^1 ; Khvalkovskiy, N.A.^1 ; Paprotskiy, S.K.^1 ; Vasil'Evskii, I.S.^2 ; Vinichenko, A.N.^2

Kotelnikov Institute of Radio Engineering and Electronics of RAS, Mokhovaya 11-7, Moscow

125009, Russia^1

National Research Nuclear University MEPhI, Kashirskoe shosse 31, Moscow

115409, Russia^2

Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark

DE

19716, United States^3

关键词: Current hysteresis;    Electric domain;    Electrical domains;    GaAs/AlAs superlattice;    Liquid nitrogen temperature;    Moving domain;    Short periods;    Tunneling current;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012032/pdf
DOI  :  10.1088/1757-899X/475/1/012032

来源: IOP

【 摘 要 】

The conductivity of short-period GaAs/AlAs superlattices at the electrical domain formation was studied at room and liquid nitrogen temperatures. The evolution of tunneling current at sweep-up and sweep-down of the bias was investigated. The step-like decrease in current at some threshold voltage was referred to moving domain formation. The current hysteresis and periodic maximums was observed in the electric domain regime. The hysteresis was explained by the changes of electrical domain regimes along with boundary conditions. The origin of current maximum is discussed.