Polariton-like stimulated excitations in rectifying terahertz GaAs/AlAs double barrier nanostructures driven by nonequilibrity of the resonant-tunneling proces

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Aleksanyan, A.A.^1 ; Karuzskii, A.L.^1 ; Mityagin, Yu A.^1 ; Murzin, V.N.^1 ; Perestoronin, A.V.^1

Lebedev Physical Institute of RAS, Leninsky prospekt 53, Moscow

119991, Russia^1

关键词: Conduction-band profile;    Electromagnetic signals;    Internal amplifiers;    Negative differential conductance;    Polariton excitation;    Terahertz detectors;    Tunneling current;    Voltage oscillation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012031/pdf
DOI  :  10.1088/1757-899X/475/1/012031

来源: IOP

【 摘 要 】

We have studied the periodical-in-voltage oscillations in the current-voltage characteristics of GaAs/AlAs double barrier resonant tunneling diode terahertz detectors. The found oscillations of the negative differential conductance are attributed to LO-phonon-branch polariton excitations stimulated by electrons tunneling through the quantum active region in the resonance nanostructure. It is argued that, due to the conduction-band profiles disposition in a manner of the inversion-like nonequilibrium cascade, the tunneling current supplies the inevitable excessive energy. The RTD serves as an internal amplifier of weak electromagnetic signals, provided by the region of negative differential conductance.