Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Gudina, S.V.^1 ; Arapov, Yu G^1 ; Ilchenko, E.V.^1 ; Neverov, V.N.^1 ; Savelyev, A.P.^1 ; Podgornykh, S.M.^1 ; Shelushinina, N.G.^1 ; Yakunin, M.V.^1 ; Vasil'Evskii, I.S.^2 ; Vinichenko, A.N.^2

M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, S. Kovalevskaya str. 18, Yekaterinburg

620990, Russia^1

National Research Nuclear University MEPhI, Kashirskoe shosse 31, Moscow

115409, Russia^2

关键词: Linear temperature dependence;    Scaling behavior;    Spin-orbit couplings;    Transition point;    Transition regions;    Transition widths;    Two-dimensional electron system;    Zero temperatures;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012029/pdf
DOI  :  10.1088/1757-899X/475/1/012029

来源: IOP

【 摘 要 】

We provide a systematic measurement of the longitudinal ρxx and Hall ρxy resistivities of quantum Hall transition in a two-dimensional electron system In0.9Ga0.1As/In0.81Al0.19As with strong spin-orbit coupling. For half-integer filling factors the linear temperature dependence of the effective quantum Hall effect plateau-to-plateau transition width ΔB(T) is observed in contrast to scaling behavior for systems with short-range disorder. The recent prediction that the width of transition region remains finite when extrapolated to zero temperature, resulting from Landau level mixing, is more preferable. The shift of the transition point in magnetic field with the temperature is found to originate from the mixing between Landau levels due to the inelastic scattering.