Effect of thin heterogeneous functional nanolayers on electron transport in InGaAs-based quantum wells with high electron density (a review)

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Vasil'Evskii, I.S.^1

National Research Nuclear University MEPhI, Kashirskoe sh. 31, Moscow

115409, Russia^1

关键词: Degree of freedom;    Electron subbands;    Electron transport;    Electron transport process;    High-electron-density;    Quantum treatment;    Quantum well heterostructures;    Spatially inhomogeneous;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012023/pdf
DOI  :  10.1088/1757-899X/475/1/012023

来源: IOP

【 摘 要 】

A prospective improvement of InGaAs-based quantum well heterostructures design is possible towards the quantum treatment of electron subbands states and electron transport processes in the real structures with thin spatially inhomogeneous functional nanolayers. Insertion of nanosized GaAs, AlAs and InAs layers into quantum well/spacer/barrier layers or applying a graded InyGa1-yAs channel can enhance electron transport properties and gives a novel degree of freedom for the quantum structures engineering. The review and original study for PHEMT/GaAs, HFET/GaAs and InP HEMT structures are discussed.