Design and fabrication of terahertz quantum cascade laser with double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Khabibullin, R.A.^1 ; Shchavruk, N.V.^1 ; Pavlov, A Yu^1 ; Klochkov, A.N.^1 ; Glinskiy, I.A.^1 ; Tomosh, K.N.^1 ; Ponomarev, D.S.^1 ; Cirlin, G.E.^2 ; Zhukov, A.E.^2

Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia^1

St Petersburg National Research Academic University of RAS, St Petersburg, Russia^2

关键词: Double-metal waveguide;    GaAs/AlGaAs heterostructures;    ICP-RIE;    Operation conditions;    Oscillator strengths;    SI-GaAs;    Terahertz quantum-cascade lasers;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012020/pdf
DOI  :  10.1088/1757-899X/475/1/012020

来源: IOP

【 摘 要 】

We have designed multilayer heterostructure (MH) based on three quantum well GaAs/Al0.15Ga0.85As active module with diagonal transitions and optimized oscillator strength - 0.425. Furthermore, we have developed a method for the fabrication of terahertz quantum cascade laser (THz QCL) with double metal waveguide via lowerature In-Au wafer bonding followed by SI-GaAs substrate removal. ICP RIE in BCl3/Ar has been used to obtain laser ridges (widths 50-200 mkm) with vertical sidewalls. We investigate the dependence of the MH energy band structure on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions.