| 7th Global Conference on Materials Science and Engineering | |
| On using photoconductivity decay to determine Si free carrier recombination lifetime: possibilities and challenges | |
| 工业技术(总论);材料科学 | |
| Anfimov, I.M.^1 ; Anfimov, M.V.^1 ; Egorov, D.S.^1 ; Kobeleva, S.P.^1 ; Pushkov, K.V.^1 ; Schemerov, I.V.^1 ; Yurchuk, S.Yu.^1 | |
| National University of Science and Technology MISiS, Moscow | |
| 119049, Russia^1 | |
| 关键词: Continuity equations; Free carrier recombination; Lifetime measurements; Measurement equipment; Numerical calculation; Photoconductivity decay; Surface recombination velocities; Surface recombinations; | |
| Others : https://iopscience.iop.org/article/10.1088/1757-899X/474/1/012011/pdf DOI : 10.1088/1757-899X/474/1/012011 |
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| 来源: IOP | |
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【 摘 要 】
Free carrier recombination lifetime (τ) in Si single crystals is a parameter, that characterizes the quality of the material. The primary procedure for τ measurement in ingots is photoconductivity decay (PCD) analyses, including contactless μ-PCD and eddy current methods. One of the main problem in this methods is a surface recombination influence on the PCD curve. It is usually assumed that in ingots the influence of surface recombination can be neglected. Well-known dependence of effective lifetime (τeff ) on τ, surface recombination velocity (S) and sample thickness (d) describes the maximum value of a lifetime. Based on the numerical calculations of the one dimensional continuity equation we have shown that if the sample thickness exceed 5LD , the maximum lifetime cannot be achieved before PCD signal decline to 5% of maximum, so the question arises what is the interval of the decay curve where the experimental value of the τeff has to be determined. We used the range from 45-5% of the maximum PCD signal following the recommended SEMI MF 1575 standard (τSEMI ). The dependencies of τSEMI on τ, d and S were calculated for different versions of PCD measurements and measurement equipment. The recommended thickness for lifetime measurements of non-passivated samples is in the range (1-5)LD . The hardware capabilities of contactless methods are compared.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| On using photoconductivity decay to determine Si free carrier recombination lifetime: possibilities and challenges | 620KB |
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